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DMG4468LFG
10,000
1,000
100
T A = 150°C
T A = 125°C
1,000
100
T A = 85°C
10
T A = 125°C
T A = 150°C
10
T A = 85°C
T A = -55°C
T A = 25°C
1
0
T A = 25°C
5 10 15 20 25 30
1
1
2 3 4 5 6 7 8
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Leakage Current vs. Drain-Source Voltage
1,000
100
V GS , GATE-SOURCE VOLTAGE (V)
Fig.10 Gate-Source Leakge Current vs Voltage
10
T A = 125°C
T A = 150°C
1
T A = 85°C
T A = -55°C T A = 25°C
1
2 3 4 5 6 7 8
V GS , GATE-SOURCE VOLTAGE (V)
Fig.11 Gate-Source Leakge Current vs Voltage
1
D = 0. 7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
R θ JA (t) = r(t) * R θ JA
D = 0.02
R θ JA = 83°C/W
0.01
D = 0.01
P(pk)
t 1
T J A = P * R θ JA (t)
D = 0.005
-T
t 2
Duty Cycle, D = t 1 2
/t
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01 0.1 1
10
100
1,000
t 1 , PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
DMG4468LFG
Document number: DS31857 Rev. 2 - 2
4 of 6
www.diodes.com
October 2009
? Diodes Incorporated
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